Eur. Phys. J. Special Topics 158, 249-254 (2008)
DOI: 10.1140/epjst/e2008-00683-1
1 University of Karlsruhe, IMT, Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
2 Forschungszentrum Karlsruhe, IMT, Postfach 3640, 76021 Karlsruhe, Germany
3 Tohoku University, IMRAM, Sendai 980-8577, Japan
(Published online: 1 May 2008)
© EDP Sciences, Springer-Verlag 2008
DOI: 10.1140/epjst/e2008-00683-1
NiMnGa nanostructures produced by electron beam lithography and Ar-ion etching
D. Auernhammer1, M. Schmitt2, M. Ohtsuka3 and M. Kohl1, 21 University of Karlsruhe, IMT, Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
2 Forschungszentrum Karlsruhe, IMT, Postfach 3640, 76021 Karlsruhe, Germany
3 Tohoku University, IMRAM, Sendai 980-8577, Japan
(Published online: 1 May 2008)
Abstract
The technologies of electron beam lithography, dry
etching and systems integration are investigated to fabricate a series of
Ni-Mn-Ga double-beam structures designed with decreasing critical dimensions
of 10 
m, 1 m and 400 nm. Ni-Mn-Ga thin films of 1 m
thickness are deposited by magnetron sputtering and heat-treated in
free-standing condition after selective removal of the substrate.
Differential scanning calorimetry and electrical resistance measurements on
the films show the characteristic features of martensitic transformation
above room temperature. First optical beam deflection experiments
demonstrate the magnetic and thermal actuation performance of the
double-beam structures.
© EDP Sciences, Springer-Verlag 2008
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