NiMnGa nanostructures produced by electron beam lithography and Ar-ion etchingD. Auernhammer1, M. Schmitt2, M. Ohtsuka3 and M. Kohl1, 2
1 University of Karlsruhe, IMT, Hermann-von-Helmholtz Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
2 Forschungszentrum Karlsruhe, IMT, Postfach 3640, 76021 Karlsruhe, Germany
3 Tohoku University, IMRAM, Sendai 980-8577, Japan
(Published online: 1 May 2008)
The technologies of electron beam lithography, dry etching and systems integration are investigated to fabricate a series of Ni-Mn-Ga double-beam structures designed with decreasing critical dimensions of 10 m, 1 m and 400 nm. Ni-Mn-Ga thin films of 1 m thickness are deposited by magnetron sputtering and heat-treated in free-standing condition after selective removal of the substrate. Differential scanning calorimetry and electrical resistance measurements on the films show the characteristic features of martensitic transformation above room temperature. First optical beam deflection experiments demonstrate the magnetic and thermal actuation performance of the double-beam structures.
© EDP Sciences, Springer-Verlag 2008