Silicon carbide thin films for EUV and soft X-ray applicationsG. Monaco1, M. Gastaldi1, P. Nicolosi1, M.G. Pelizzo1, E. Gilioli2, S. Rampino2, F. Bissoli2, F. Pattini2, S. Agnoli3, G. Granozzi3 and N. Manuzzato3
1 LUXOR Laboratory CNR-INFM, University of Padua, Padua, Italy
2 IMEM-CNR, Parma, Italy
3 Department of Chemical Sciences, INSTM and INFM Research Unit, University of Padua, Padua, Italy
We have deposited SiC thin films using two different deposition techniques, Pulsed Electron Deposition (PED) and Pulsed Laser Deposition (PLD). The PED technique is a relatively new technique where a pulsed electron flux with high energy directly hits the target surface producing a plasma in a very similar way to PLD, where, instead, a pulsed laser beam is used. These two techniques can give very dense thin films with stoichiometry much closer to the target one's compared to others physical vapour deposition techniques (sputtering, e-beam). The major drawback of PED is that the thin film surface is affected by the presence of particulate, due to the impact of the high energy electron beam with the target. In the PLD system we used a magnetic field to curve the plasma path in the vacuum and we placed the substrate at with respect to the target allowing the deposition of particulate-free samples. The characterization of the films has been made by measuring the optical reflectance vs angle of incidence in the EUV region (from 121.6 nm down to 40.7 nm), taking measurements at different time from deposition. X-ray photoemission measurements have been also carried out to show stoichiometry and the presence of contaminants. Other measurements such as X-ray diffraction, atomic force microscopy and profiling were also carried out to check crystalline domains and surface roughness.
© EDP Sciences, Springer-Verlag 2009