https://doi.org/10.1140/epjs/s11734-024-01460-4
Regular Article
Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates
1
School of Instrument Science and Opto-electronics Engineering, Beijing Information Science and Technology University, 100192, Beijing, China
2
Songshan Lake Materials Laboratory, 523808, Dongguan, People’s Republic of China
3
International School of Microelectronics, Dongguan University of Technology, 523808, Dongguan, China
a
yuanye@sslab.org.cn
b
zxt1001@bistu.edu.cn
Received:
28
October
2024
Accepted:
18
December
2024
Published online:
9
January
2025
In this work, the Al0.55Ga0.45N epilayer and full deep ultraviolet light-emitting diode (UVC-LED) structures were prepared on high-temperature-annealed AlN/sapphire templates with sapphire miscut angles of 0°, 0.2°, 0.4°, 0.6°, 0.8° and 1.0°. During the AlGaN epitaxy process, adatoms were mobile on the AlN template, forming a hexagonal lattice, and lattice distortion occurred due to the different miscut angles of the sapphire substrates. This distorted lattice was used to modify the strain of the AlGaN and UVC-LED structures, aiming to modulate the crystallization and performance of the subsequent Al0.42Ga0.58N/Al0.55Ga0.45N UVC-LED structure. It was observed that, upon gradually increasing the miscut angle from 0° to 1.0°, the AlGaN region exhibited optimal crystalline quality when the miscut angle was 0.4°, whereas the electroluminescence demonstrated a quasi-monotonic redshift phenomenon. These results confirm the contribution of the miscut angle of sapphire in UVC-LED epitaxy on high-temperature-annealed AlN templates.
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© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2024
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.