Sine-modulation-based memristive system with initials-boosted plane bifurcation and extreme multistability
School of Microelectronics and Control Engineering, Changzhou University, 213164, Changzhou, People’s Republic of China
Accepted: 15 July 2022
Published online: 26 July 2022
Memristor is a special nonlinear element with inner state variable and can give rise to the initial-boosted dynamics in systems built with it. This paper proposes a four-dimensional (4-D) sine-modulation-based memristive system by coupling an ideal memristor into a three-dimension (3-D) linear system. Particularly, the coupling variable sampled from the 3-D linear system is first modulated by the sine function before being imported into the ideal memristor. As a result, the 4-D sine-modulation-based memristive system possesses a discrete plane equilibrium set and exhibits significant initials-boosted plane bifurcation in this plane. By means of theoretical analysis and numerical simulation, the initials-boosted coexisting attractors with extreme multistability are also uncovered. Finally, a physical circuit for the 4-D sine-modulation-based memristive system is designed and corresponding circuit simulations are executed by the Power Simulation (PSIM) software.
© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022