https://doi.org/10.1140/epjst/e2008-00447-y
Characterization of nano-depth junctions in silicon by using Photo-Carrier Radiometry (PCR)
1
Photo-Thermal Diagnostics Inc., 101 College St., Toronto, Ontario, M5G 1L7, Canada
2
Centre for Diffusion Wave Technologies (CADIFT), Mechanical Engineering Department, 5 King College Rd., Toronto, Ontario, M5S 3G8, Canada
3
Therma-Wave Inc., 1250 Reliance Way, Fremont, CA, 94539, USA
Non-contact, non-intrusive Photo-Carrier Radiometry (PCR) was used for monitoring nano-depth junctions in industrial-grade silicon wafers. The silicon wafers were implanted with arsenic to the dose of 5E1014 cm-2. The junction depth was in the 30 nm to 100 nm range. Quantitative results for PCR sensitivity to the junction depth and implantation energies are presented. This laser-based carrier-wave technique monitors harmonically photo-excited and recombining carriers and shows great potential advantages for the characterization of multiple semiconductor processes such as ion implantation, ultra shallow junction (USJ) depth determination and other Si wafer process steps.
© EDP Sciences, Springer-Verlag, 2008
