Eur. Phys. J. Special Topics 153, 271-274 (2008)
https://doi.org/10.1140/epjst/e2008-00443-3

Photocarrier radiometric characterization of electronic transport properties of H⁺ implanted silicon wafers

¹ Institute of Modern Optical Technologies, Suzhou University, Suzhou, Jiangsu, 215006, P.R. China
² Key Lab of Modern Optical Technologies of Jiangsu Province, Suzhou, Jiangsu, 215006, P.R. China
³ Center for Advanced Diffusion Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, M5S 3G8, Canada
⁴ Physics Department, Ruhr-Universitaet Bochum, 44780 Bochum, Germany

Abstract

Industrial n-type Si wafers were H⁺-ion-implanted and the electronic transport properties were studied using photo-carrier radiometry (PCR). A fitting procedure was introduced using a relatively simple 2-layer PCR model in lieu of the more realistic but substantially more complicated 3-layer model. It was found that the 2-layer model provides an optimal tool for characterizing H⁺ ion implants, balancing accuracy, complexity and validity as compared to the simpler, but inaccurate, 1-layer model.