Eur. Phys. J. Special Topics 153, 295-297 (2008)
https://doi.org/10.1140/epjst/e2008-00449-9

Investigation of H⁺ implanted silicon wafers with two-beam cross-modulation photocarrier radiometry

Centre for Advanced Diffusion-Wave Technologies (CADIFT), Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, M5S 3G8, Canada

Abstract

Single beam laser-induced infrared photocarrier radiometry (PCR) has been applied for measuring transport properties of H⁺ ion-implanted silicon samples. The contrast between the PCR signals inside and outside the area of implantation was investigated for different doses and energies of implantation. The H⁺ ion-implantation range of doses and energies was 3×10¹⁴ cm^-2 - 3×10¹⁶ cm^-2 and 0.75 MeV–2 MeV, respectively. Furthermore, a two-beam cross-modulation PCR technique was introduced to perform the same type of measurements inside and outside the implanted area. Comparison between contrasts from single- and double-beam methods showed significantly higher degree of sensitivity for the two-beam PCR technique.