https://doi.org/10.1140/epjs/s11734-024-01389-8
Regular Article
Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection
1
State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials, Sun Yat-Sen University, 518107, Shenzhen, China
2
Polytechnic Institute, Zhejiang University, 310058, Hangzhou, Zhejiang, China
3
Zhengzhou Zhongnan Jete Superhard Material Co., Ltd., 450001, Zhengzhou, China
Received:
13
July
2024
Accepted:
26
October
2024
Published online:
19
November
2024
Cubic boron nitride (c-BN) is an ultra-wide bandgap semiconductor with excellent physical characteristics such as carrier regulation, high breakdown electric field, and high thermal conductivity, which shows a great potential of being applied to high-voltage, high-frequency, and highly integrated devices. Here, c-BN crystals were synthesized by high-temperature and high-pressure catalyst at 1800 °C and 6 GPa, which have been demonstrated to possess a great crystal quality by the results from XRD, Raman spectroscopy and TEM. Besides, based on the crystals synthesized, an Au/c-BN/Ti/Mo/Au Schottky diode was prepared, exhibiting a large photo-to-dark ratio (PDCR) (> 103 at 10 V bias and under 185 nm light) and a high responsivity (0.466 mA·W−1 at 10 V bias and under 185 nm light) under the VUV light source, which indicates a good application prospect of the c-BN diodes for VUV detection.
The original online version of this article was revised: In this article, for references 2, 7–22, 24–35 page numbers were missing.
A correction to this article is available online at https://doi.org/10.1140/epjs/s11734-025-01598-9.
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corrected publication 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
