EPJ Special Topics (EPJ ST)

Open Access

Editorial

Ultra-wide-bandgap semiconductors: opportunities and challenges p. 225

Wei Zheng, Daoyou Guo and Ye Yuan

Published online: 06 March 2025

DOI: 10.1140/epjs/s11734-025-01528-9

Review

Growth of gallium oxide bulk crystals: a review p. 231

Lin Huang, Huili Tang, Chaoyi Zhang, Peng Sun, Qiancheng Fang, Feng Wu, Ping Luo, Bo Liu and Jun Xu

Published online: 17 February 2025

DOI: 10.1140/epjs/s11734-025-01486-2

Regular Article

Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition p. 273

Tiecheng Luo, Xifu Chen, Zhuo Yang, Weiqu Chen, Chenhong Huang, Hongtai Luo, Yanli Pei, Xing Lu, Gang Wang and Zimin Chen

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01485-3

Regular Article

Demonstration of vertical Ga₂O₃ Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology p. 283

Hongyu Liu, Shida Han, Xiaoli Lu, Yuangang Wang, Shaobo Dun, Tingting Han, Yuanjie Lv and Zhihong Feng

Published online: 14 March 2025

DOI: 10.1140/epjs/s11734-024-01432-8

Regular Article

A novel Ga₂O₃ cascode JFET with normally off operation and low switching loss p. 291

Hao Yu Song, Bo Yi, Ze Lin Zhao, Wan Li Zhang and Ling-Xuan Qian

Published online: 16 December 2024

DOI: 10.1140/epjs/s11734-024-01429-3

Regular Article

β-Ga₂O₃ extreme ultraviolet photodetectors p. 303

Naiji Zhang, Zhao Wang, Zhuogeng Lin, Siqi Zhu, Wei Cai, Lixin Zhang, Xin Zhang, Muqi Rong, Xiaoshi Zhang, Duanyang Chen et al. (2 more)

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01487-1

Regular Article

Enabling DUV polarization detection with isotropic amorphous gallium oxide p. 311

Yaqian Zhang, Yonghui Zhang, Huili Liang, Rui Zhu, Xina Wang, Xiaoniu Peng and Zengxia Mei

Published online: 14 November 2024

DOI: 10.1140/epjs/s11734-024-01390-1

Regular Article

Impact of contact properties on the performance of β-Ga₂O₃ solar-blind photodetector p. 319

Yu-Song Dong, Ming-Xuan Liang and Ling-Xuan Qian

Published online: 07 January 2025

DOI: 10.1140/epjs/s11734-024-01459-x

Regular Article

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector p. 327

Xi Guo, Mengmeng Chang, Jinbin Wang, Ruxue Bai, Xiangli Zhong, Fabi Zhang, Fengmin Wu and Daoyou Guo

Published online: 05 November 2024

DOI: 10.1140/epjs/s11734-024-01387-w

Regular Article

Improved performance of Ga₂O₃ solar-blind ultraviolet photodetectors with integrated n⁺n/Schottky-junctions p. 337

Weisen Li, Jiarong Liang, Qijun Sun, Xingui Tang and Dan Zhang

Published online: 14 November 2024

DOI: 10.1140/epjs/s11734-024-01393-y

Open Access

Regular Article

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method p. 347

Zuoyan Qin, Wenliang Li, Guangze He, Jun Tan, Liying Yin, Jianhua Ji, Baikui Li, Zhenhua Sun and Honglei Wu

Published online: 06 November 2024

DOI: 10.1140/epjs/s11734-024-01388-9

Regular Article

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate p. 357

Jiahui Li, Ye Yuan, Tianren Cai, Hengyi Yin, Jiale Zhao, Jiakang Cao, Wenting Wan, Shuai Liu and Yu Zhao

Published online: 12 December 2024

DOI: 10.1140/epjs/s11734-024-01433-7

Regular Article

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates p. 363

Nianfei Wen, Ye Yuan, Tianren Cai, Tongxin Lu, Tai Li, Jiahui Li, Jiale Zhao, Hengyi Yin, Jiakang Cao, Shuai Liu et al. (3 more)

Published online: 09 January 2025

DOI: 10.1140/epjs/s11734-024-01460-4

Regular Article

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes p. 369

Tingting Lin, Liwei Liu, Xinguo Liu, Chengyu Liu, Changjian Zhou and Wenliang Wang

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01488-0

Regular Article

Design of high-frequency surface acoustic wave resonators based on Al_0.8Sc_0.2N/AlN/Sapphire multilayer structure p. 375

Ji Li, Wei Guo, Fanping Meng, Sitong Chen, Fang Ye, Weiping Xie, Li Chen, Jinyan Wang and Jichun Ye

Published online: 09 December 2024

DOI: 10.1140/epjs/s11734-024-01430-w

Review

Progress in first-principles studies on doped semiconductor diamond p. 385

Zhen Wang, Peng Jin, Pengfei Qu, Fanqiu Cao, Xu Han and Zhanguo Wang

Published online: 13 January 2025

DOI: 10.1140/epjs/s11734-024-01458-y

Regular Article

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection p. 403

Zhuogeng Lin, Lixin Zhang, Siqi Zhu, Zhao Wang, Naiji Zhang, Xing Wei, Xiangfa Zhang and Wei Zheng

Published online: 19 November 2024

DOI: 10.1140/epjs/s11734-024-01389-8

EPJ

The European Physical Journal Special Topics

Volume 234 / No 2 (May 2025)

Ultra-Wide-Bandgap Semiconductors

Ultra-Wide-Bandgap Semiconductors

Ultra-wide-bandgap semiconductors: opportunities and challenges p. 225

Growth of gallium oxide bulk crystals: a review p. 231

Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition p. 273

Demonstration of vertical Ga₂O₃ Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology p. 283

A novel Ga₂O₃ cascode JFET with normally off operation and low switching loss p. 291

β-Ga₂O₃ extreme ultraviolet photodetectors p. 303

Enabling DUV polarization detection with isotropic amorphous gallium oxide p. 311

Impact of contact properties on the performance of β-Ga₂O₃ solar-blind photodetector p. 319

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector p. 327

Improved performance of Ga₂O₃ solar-blind ultraviolet photodetectors with integrated n⁺n/Schottky-junctions p. 337

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method p. 347

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate p. 357

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates p. 363

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes p. 369

Design of high-frequency surface acoustic wave resonators based on Al_0.8Sc_0.2N/AlN/Sapphire multilayer structure p. 375

Progress in first-principles studies on doped semiconductor diamond p. 385

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection p. 403

Conference announcements

EPJ

The European Physical Journal Special Topics

Volume 234 / No 2 (May 2025)

Ultra-Wide-Bandgap Semiconductors

Ultra-Wide-Bandgap Semiconductors

Ultra-wide-bandgap semiconductors: opportunities and challenges p. 225

Growth of gallium oxide bulk crystals: a review p. 231

Epitaxial lateral overgrowth of ε-Ga2O3 by metal–organic chemical vapor deposition p. 273

Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology p. 283

A novel Ga2O3 cascode JFET with normally off operation and low switching loss p. 291

β-Ga2O3 extreme ultraviolet photodetectors p. 303

Enabling DUV polarization detection with isotropic amorphous gallium oxide p. 311

Impact of contact properties on the performance of β-Ga2O3 solar-blind photodetector p. 319

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga2O3 solar-blind photodetector p. 327

Improved performance of Ga2O3 solar-blind ultraviolet photodetectors with integrated n+n/Schottky-junctions p. 337

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method p. 347

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate p. 357

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates p. 363

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes p. 369

Design of high-frequency surface acoustic wave resonators based on Al0.8Sc0.2N/AlN/Sapphire multilayer structure p. 375

Progress in first-principles studies on doped semiconductor diamond p. 385

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection p. 403

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Conference announcements

Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition p. 273

Demonstration of vertical Ga₂O₃ Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology p. 283

A novel Ga₂O₃ cascode JFET with normally off operation and low switching loss p. 291

β-Ga₂O₃ extreme ultraviolet photodetectors p. 303

Impact of contact properties on the performance of β-Ga₂O₃ solar-blind photodetector p. 319

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector p. 327

Improved performance of Ga₂O₃ solar-blind ultraviolet photodetectors with integrated n⁺n/Schottky-junctions p. 337

Design of high-frequency surface acoustic wave resonators based on Al_0.8Sc_0.2N/AlN/Sapphire multilayer structure p. 375