https://doi.org/10.1140/epjs/s11734-024-01429-3
Regular Article
A novel Ga2O3 cascode JFET with normally off operation and low switching loss
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 611731, Chengdu, The People’s Republic of China
a
yb@uestc.edu.cn
b
lxqian@uestc.edu.cn
Received:
10
September
2024
Accepted:
25
November
2024
Published online:
16
December
2024
In this paper, a novel normally off cascode gallium oxide (Ga2O3) junction FET (JFET) is designed and studied by TCAD. The cascode JFET consists of two components: a low-voltage enhancement-mode (E-mode) Si Trench-MOSFET and a high-voltage depletion-mode (D-mode) Ga2O3 Fin-heterojunction FET (Fin-HJFET). The Ga2O3 cascode JFET demonstrates a breakdown voltage (BV) of 3345 V, a specific on-resistance (Ron, sp) of 11.0 mΩ⋅cm2, a high saturation drain current (ID, sat) density of 672 A⋅cm−2 and a positive threshold voltage (Vth) of 1.2 V. Besides, the cascode JFET shows a much lower reverse on-state voltage (VRon) of 1.5 V and a much faster switching speed than conventional Ga2O3 Fin-HJFET. The turning-on and -off switching loss are reduced by 61.4% and 78.4%, respectively.
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© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2024
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
