https://doi.org/10.1140/epjs/s11734-024-01430-w
Regular Article
Design of high-frequency surface acoustic wave resonators based on Al0.8Sc0.2N/AlN/Sapphire multilayer structure
1
School of Software & Microelectronics, Peking University, 102600, Beijing, China
2
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, 315201, Ningbo, China
3
School of Integrated Circuits, Peking University, 100091, Beijing, China
a
guowei@nimte.ac.cn
b
wangjinyan@pku.edu.cn
c
jichun.ye@nimte.ac.cn
Received:
29
September
2024
Accepted:
25
November
2024
Published online:
9
December
2024
This work reports on the propagation characteristics and the structure optimization of surface acoustic wave (SAW) resonators based on Al1−xScxN/AlN/Sapphire multilayer structure. The variations of vp and keff2 of the Rayleigh mode as a function of layer thicknesses were simulated by finite element method (FEM). Through parameter optimization and choosing appropriate electrode materials, keff2 as high as 2.13% was obtained. With a “slow-on-fast” phase velocity design, higher-order Sezawa mode was excited in this multilayer structure, significantly raising the operation frequency of the AlScN SAW resonator while maintaining decent crystalline quality of AlScN by growing on AlN templates. Our results show great potentials in the large-scale fabrication of Al0.8Sc0.2N/AlN/Sapphire SAW resonators in the application of 5G communication with boosted operation frequency and performance.
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© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2024
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
