https://doi.org/10.1140/epjs/s11734-025-01528-9
Editorial
Ultra-wide-bandgap semiconductors: opportunities and challenges
1
School of Materials, Shenzhen Campus of Sun Yat-sen University, Sun Yat-Sen University, 518107, Shenzhen, China
2
Department of Physics, Zhejiang Sci-Tech University, 310018, Hangzhou, China
3
Songshan Lake Materials Laboratory, 523808, Dongguan, China
This editorial focuses on the special issue titled “Ultra-Wide-Bandgap Semiconductors”. It elaborates on the motivation for this special issue, introduces the application potentials and challenges of semiconductors such as gallium oxide, aluminum nitride, diamond, and cubic boron nitride in various fields, summarizes the research content of relevant papers, presents the current research status and development trends in this field, and provides references for researchers in this area.
The original online version of this article was revised: Reference 2. X. He, S. Kuang, Z. Yang et al., Investigation of high mobility β-Ga2O3 homoepitaxial films on miscut β-Ga2O3 (100) substrates by MBE. Eur. Phys. J. Spec. Top. (2025). https://doi.org/10.1140/epjs/s11734-024-01431-9 and all text passages refering to it have been deleted. Susequent references have been renumbered.
A correction to this article is available online at https://doi.org/10.1140/epjs/s11734-025-01682-0.
© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2025
corrected publication 2025
