https://doi.org/10.1140/epjst/e2007-00222-8
Graphene field-effect devices
1
Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen, Germany
2
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
3
Paul-Drude Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Corresponding authors: echtermeyer@iht.rwth-aachen.de lemme@amo.de
In this article, graphene is investigated with respect to its electronic properties when introduced into field effect devices (FED). With the exception of manual graphene deposition, conventional top-down CMOS-compatible processes are applied. Few and monolayer graphene sheets are characterized by scanning electron microscopy, atomic force microscopy and Raman spectroscopy. The electrical properties of monolayer graphene sandwiched between two silicon dioxide films are studied. Carrier mobilities in graphene pseudo-MOS structures are compared to those obtained from double-gated Graphene-FEDs and silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs).
© EDP Sciences, Springer-Verlag, 2007
