Eur. Phys. J. Special Topics 148, 39-54 (2007)
https://doi.org/10.1140/epjst/e2007-00224-6

Weak localization in monolayer and bilayer graphene

¹ Department of Physics, Lancaster University, LA1 4, YB Lancaster, UK
² Division of Applied Physics, Graduate School of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
³ Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8551, Japan
⁴ Physics Department, Columbia University, 538 West 120th Street, New York, NY, 10027, USA

Corresponding author: k.kechedzhi@lancaster.ac.uk

Abstract

We describe the weak localization correction to conductivity in ultra-thin graphene films, taking into account disorder scattering and the influence of trigonal warping of the Fermi surface. A possible manifestation of the chiral nature of electrons in the localization properties is hampered by trigonal warping, resulting in a suppression of the weak anti-localization effect in monolayer graphene and of weak localization in bilayer graphene. Intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a narrow wire tends to restore weak localization resulting in negative magnetoresistance in both materials.