Photoacoustic and photothermal radiometry spectra of implanted Si wafers
Center for multidisciplinary studies, University of Belgrade, 11030 Belgrade, Serbia
2 Instytut Fizyki, Uniwersytet Mikołaja Kopernika, ul. Grudziadzka 5/7, 87-100 Torun, Poland
3 Instituto de Fisica de la Universidad de Guanajuato, IFUG, Apdo. Postal E-143 Leon, Gto., Mexico
4 Experimental Physik, Festkoerperspektroskopie, Ruhr-Universitaet, Bochum, Germany
The effects of Ar+8 and O+6 ion implantation of Si were investigated by photoacoustic (PA) and photothermal radiometry (PTR) methods. The surface of Si sample was treated with Ar+8 or O+6 ions with various doses. Amplitude and phase PA spectra of Si with and without ion-implantation were measured and analyzed in the wavelength range from 800 to 1600 nm (the energy range from 0.75 to 1.55 eV) and frequency of modulation, from 1 Hz to 100 kHz.
© EDP Sciences, Springer-Verlag, 2008