Eur. Phys. J. Special Topics 153, 283-285 (2008)
https://doi.org/10.1140/epjst/e2008-00446-0

Noncontact Deep Level Photo-Thermal Spectroscopy of semi-insulating GaAs

Center for Advanced Diffusion-Wave Technologies, Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, Ontario, M5S 3G8, Canada

Abstract

A purely optical Deep Level Photo-Thermal Spectroscopy has been developed for the defect-state characterization of semi-insulating (SI) GaAs wafers. The methodology utilizes near infrared sub-bandgap absorption to monitor the thermal emission of traps after an optical filling pulse, and the data are analyzed in a rate-window manner by a lock-in amplifier. The technique has been applied to a VGF grown SI-GaAs wafer, and the very first results are presented.