The acoustic method of the surface potential investigation in GaP:Te (110) real surface
Institute of Physics, Silesian University of Technology, 44-100 Gliwice, Poland
The acoustic method of the surface potential investigation in semiconductors has been described. The method is based on the transverse acoustoelectric effect TAV in layered structure: piezoelectric waveguide – semiconductor. The paper presents experimental results of the surface potential investigations obtained after various surface treatments in the GaP:Te (110) single crystals. Strong impact of mechanical and chemical surface treatments upon the surface potential values are observed. It follows from the measurements that the acoustic method may give interesting information about the surface potential of the semiconductor monocrystals in the high frequency range.
© EDP Sciences, Springer-Verlag, 2008