Residual stress in Ni-Mn-Ga thin films deposited on different substrates

S. Doyle; V. A. Chernenko; S. Besseghini; A. Gambardella; M. Kohl; P. Müllner; M. Ohtsuka

doi:10.1140/epjst/e2008-00660-8

EPJ

Residual stress in Ni-Mn-Ga thin films deposited on different substrates

S. Doyle¹, V. A. Chernenko²^,3, S. Besseghini³, A. Gambardella³, M. Kohl⁴, P. Müllner⁵ and M. Ohtsuka⁶

¹ ANKA, Forschungszentrum Karlsruhe, 76021 Karlsruhe, Germany
² Institute of Magnetism, Vernadsky Str. 36-b, Kiev, 03142, Ukraine
³ CNR-IENI, 23900 Lecco, Italy
⁴ IMT, Forschungszentrum Karlsruhe, 76021 Karlsruhe, Germany
⁵ Department of Materials Science and Engineering, Boise State University, Boise, ID, 83725, USA
⁶ IMRAM, Tohoku University, Sendai, 980-8577, Japan

Abstract

Four series of Ni_51.4Mn_28.3Ga_20.3/substrate thin film composites, where the substrate is either Si(100), MgO(100), alumina or Mo foil, and two series of Ni_53.5Mn_23.8Ga_22.7/substrate composites where the substrate is either alumina or Mo foil, with different film thicknesses varying from 0.1 to 5 μm have been studied in the cubic phase by XRD stress measurements. The values of residual stresses are found to be dependent on both substrate and film thickness. In the submicron range, a correlation between thickness dependencies of residual stress and transformation temperatures is experimentally obtained. The temperature dependence of the d-spacing d₂₂₀ is studied for the films deposited on Si(100).