Eur. Phys. J. Special Topics 220, 243-257 (2013)
https://doi.org/10.1140/epjst/e2013-01811-6

Review

The use of magnetic fields in vertical Bridgman/Gradient Freeze-type crystal growth

¹ Institut für Nichteisenmetallurgie und Reinststoffe, TU Bergakademie Freiberg, Germany
² Hanwha Q.Cells GmbH, Thalheim, Germany
³ Institut für Fluiddynamik, Helmholtz-Zentrum Dresden-Rossendorf, Germany
⁴ Sintef Foundation, Norwegian Institute of Technology, Trondheim, Norway

^a e-mail: olf.paetzold@inemet.tu-freiberg.de

Received: 17 December 2012
Revised: 5 February 2013
Published online: 26 March 2013

Abstract

This paper outlines advanced vertical Bridgman/Gradient Freeze techniques with flow control using magnetic fields developed for the growth of semiconductor crystals. Low-temperature flow modelling, as well as laboratory-scaled crystal growth under the influence of rotating, travelling, and static magnetic fields are presented. Experimental and numerical flow modelling demonstrate the potential of the magnetic fields to establish a well-defined flow for tailoring heat and mass transfer in the melt during growth. The results of the growth experiments are discussed with a focus on the influence of a rotating field on the segregation of dopants, the influence of a travelling field on the temperature field and thermal stresses, and the potential of rotating and static fields for a stabilization of the melt flow.