Binary memory with orthogonal eigenspaces: from stable states to chaotic oscillations
Department of Radio Electronics, Faculty of Electrical Engineering and Communication, Brno University of Technology, 61600 Brno, Czech Republic
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Received in final form: 17 December 2019
Published online: 26 March 2020
This short paper demonstrates numerically and experimentally observed transitions between the stable states, regular and chaotic oscillations in the case of state representations of binary memory transformed into the Jordan form. Math model of original memory describes simple anti-series connection of two resonant tunneling diodes (RTDs). Derived third-order dynamical system is analyzed with respect to global behavior and, consequently, implemented as lumped analog circuit with piecewise linear (PWL) vector field. Oscilloscope screenshots prove that chaotic motion of binary memory is robust.
© EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature, 2020