https://doi.org/10.1140/epjs/s11734-022-00515-8
Regular Article
Preparation and electrical characterization of rubrene:MoO
film
1
Faculty of Science, Beijing University of Technology, 100124, Beijing, China
2
Department of Basic Courses, Institute of Disaster Prevention, 065201, Sanhe, Hebei, China
Received:
22
March
2021
Accepted:
3
March
2022
Published online:
16
March
2022
In this paper, rubrene:MoO mixed films were deposited on quartz glass and p-Si substrates using thermal evaporation technique. We fabricated the devices based on rubrene:MoO
mixed films in the form of Al/rubrene:MoO
/p-Si/Al. The electrical characteristics of the rubrene:MoO
film (with 1:1 weight ratio)-based devices were measured using Hall system. The results indicate the enhanced hole concentration and hole carrier mobility. In addition, the presence of charge transfer complexes leads to an increase of the conductivity and the contact between sample and electrode is almost Ohmic contact. To investigate the effect of MoO
, the rubrene:MoO
mixed films with different concentrations of MoO
were deposited using thermal evaporation technique and the Schottky barrier devices based on rubrene:MoO
mixed films were fabricated. The electrical characteristics demonstrate that the charge transfer complex had been formed when rubrene and MoO
mixed. Our results demonstrated improvement of the contact between electrode and sample in electronic devices.
© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2022