https://doi.org/10.1140/epjs/s11734-024-01393-y
Regular Article
Improved performance of Ga2O3 solar-blind ultraviolet photodetectors with integrated n+n/Schottky-junctions
Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, 510006, Guangzhou, China
Received:
26
August
2024
Accepted:
26
October
2024
Published online:
14
November
2024
In this work, a Ga2O3/GaN heterojunction is constructed by direct thermal oxidation of GaN substrate, which is inter-integrated with a Pt/Ga2O3 Schottky junction to fabricate the high-performance Ga2O3-based solar-blind ultraviolet (SBUV) photodetector. Under 0 V bias voltage and SBUV illumination, a Pt/Ga2O3/n-GaN device with a decay time of ~ 0.2 s and a photoresponsivity of 1.3 mA/W is constructed by modulating the thickness of the Ga2O3 photosensitive layer, the barrier height of the Schottky junction, and the direction of the electric field at the interface of the double junctions (Schottky junction and heterojunction). This excellent performance is attributed to the balance between light absorption efficiency and the photogenerated carrier diffusion distance in the Ga2O3 photosensitive layer, as well as the high-potential barrier formed at the Pt/Ga2O3 interface and the isotropic built-in electric field provided by the double junctions. The idea of integrating the n+n junction with the Schottky junction can provide a reference for fabricating SBUV photovoltaic detectors with high-performance in the future.
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