https://doi.org/10.1140/epjs/s11734-025-01798-3
Regular Article
Unveiling physical mechanism of high-performance perovskite solar cells with bilayer electron transport layer
1
Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institute of Physical Science and Information Technology, Anhui University, 230601, Hefei, Anhui, China
2
Key Laboratory of Intelligent Computing and Signal Processing, Ministry of Education, Anhui University, 230601, Hefei, Anhui, China
3
Anhui Province Key Laboratory of Simulation and Design for Electronic Information System, Hefei Normal University, 230001, Hefei, Anhui, China
a
xgren@ahu.edu.cn
b
09017@ahu.edu.cn
Received:
18
March
2025
Accepted:
8
July
2025
Published online:
17
July
2025
How to further increase the efficiency of perovskite solar cells (PSCs) is a matter of close attention for researchers, and is constrained by the preparation process of perovskite solar cells, the transport layer material and the interface treatment, etc. The perovskite solar cells have problems such as energy band offset, bulk defects, interfacial defects, etc., which will lead to the influence of carrier transport in the cell and the increase of non-radiative recombination loss, limiting the further efficiency enhancement. Previous experimental results show that the efficiency of PSCs with a bilayer electron transport layer is further improved. Therefore, this work conducts a comprehensive numerical simulation of the perovskite solar cell based on experimental parameters, reveals the physical mechanism of the bilayer electron transport layer and unveils its role in efficiency improvement relative to the single electron transport layer in terms of affecting the offset of energy band, bulk defects, and interfacial defects. It is shown that the bilayer electron transport layer have an enhancement effect on the built-in electric field for better charge extraction, and ultimately increasing the power conversion efficiency of perovskite solar cells. Furthermore, this structure reduces the conduction band offset (CBO) between the active layer and the electron transport layer, leading to lower interfacial recombination even at higher defect densities. As a result, the device maintains high efficiency and exhibits superior stability.
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© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
