Investigation of H+ implanted silicon wafers with two-beam cross-modulation photocarrier radiometry
Centre for Advanced Diffusion-Wave Technologies (CADIFT), Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, M5S 3G8, Canada
Single beam laser-induced infrared photocarrier radiometry (PCR) has been applied for measuring transport properties of H+ ion-implanted silicon samples. The contrast between the PCR signals inside and outside the area of implantation was investigated for different doses and energies of implantation. The H+ ion-implantation range of doses and energies was 3×1014 cm-2 - 3×1016 cm-2 and 0.75 MeV–2 MeV, respectively. Furthermore, a two-beam cross-modulation PCR technique was introduced to perform the same type of measurements inside and outside the implanted area. Comparison between contrasts from single- and double-beam methods showed significantly higher degree of sensitivity for the two-beam PCR technique.
© EDP Sciences, Springer-Verlag, 2008