Eur. Phys. J. Special Topics 172, 311-321 (2009)
https://doi.org/10.1140/epjst/e2009-01056-0

Quantized current of a hybrid single-electron transistor with superconducting leads and a normal-metal island

¹ Centre for Metrology and Accreditation (MIKES), PO Box 9, 02151 Espoo, Finland
² Low Temperature Laboratory, Helsinki University of Technology, PO Box 3500, 02015 TKK, Finland
³ Department of Applied Physics/COMP, Helsinki University of Technology, PO Box 5100, 02015 TKK, Finland
⁴ Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, 11794-3800, USA

Corresponding author: email: antti.kemppinen@mikes.fi

Abstract

We discuss the operation of the superconductor–insulator–normal-metal–insulator–superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.