Quantized current of a hybrid single-electron transistor with superconducting leads and a normal-metal island
Centre for Metrology and Accreditation (MIKES), PO Box 9, 02151 Espoo, Finland
2 Low Temperature Laboratory, Helsinki University of Technology, PO Box 3500, 02015 TKK, Finland
3 Department of Applied Physics/COMP, Helsinki University of Technology, PO Box 5100, 02015 TKK, Finland
4 Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, 11794-3800, USA
Corresponding author: email: firstname.lastname@example.org
We discuss the operation of the superconductor–insulator–normal-metal–insulator–superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.
© EDP Sciences, Springer-Verlag, 2009