https://doi.org/10.1140/epjs/s11734-024-01459-x
Regular Article
Impact of contact properties on the performance of β-Ga2O3 solar-blind photodetector
1
National Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, 611731, Chengdu, China
2
School of Integrated Circuit Science and Engineering, University of Electronic Science and Technology of China, 61173, Chengdu, China
3
Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, 401332, Chongqing, China
Received:
11
September
2024
Accepted:
18
December
2024
Published online:
7
January
2025
This article has no abstract.
Copyright comment Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
