https://doi.org/10.1140/epjs/s11734-025-01486-2
Review
Growth of gallium oxide bulk crystals: a review
MOE Key Laboratory of Advanced Micro-Structure Materials, School of Physics Science and Engineering, Tongji University, 200092, Shanghai, People’s Republic of China
Received:
27
November
2024
Accepted:
24
January
2025
Published online:
17
February
2025
Gallium oxide (Ga2O3) is a novel ultra-wide bandgap (UWBG) semiconductor material with advantages such as a wide bandgap, high breakdown field strength, fast scintillation decay time, stable physicochemical properties, and the ability to be prepared by the melt growth method. It holds promising applications in semiconductor power devices and scintillation detection systems. The preparation of large-sized, high-quality gallium oxide crystals is of significant research importance for the material's applications. This review summarizes the principles, growth equipment, progress in crystal growth, and the advantages and disadvantages of various melt growth methods for bulk gallium oxide crystals. Significant breakthroughs have been achieved in the field of β-Ga2O3 crystal growth; however, stable p-type doping and low-cost high-quality crystal preparation still face challenges.
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Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
