https://doi.org/10.1140/epjs/s11734-025-01487-1
Regular Article
β-Ga2O3 extreme ultraviolet photodetectors
1
School of Materials, Shenzhen Campus of Sun Yat-Sen University, Sun Yat-Sen University, 518107, Shenzhen, China
2
School of Physics and Astronomy, Yunnan University, 650091, Kunming, Yunnan, China
3
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 201800, Shanghai, China
4
Hangzhou Institute of Optics and Fine Mechanics, 311421, Hangzhou, China
Received:
29
November
2024
Accepted:
24
January
2025
Published online:
10
February
2025
With the advancement of technology, the demand for extreme ultraviolet (EUV) photodetectors has been increasingly growing in the fields of electronics manufacturing, space exploration, and fundamental scientific research. β-Ga2O3, with the excellent radiation resistance and thermal stability, is more suitable for EUV detection applications compared to traditional silicon materials. In this work, a β-Ga2O3 EUV photodetector with vertical Schottky barrier structure was successfully fabricated and the electrical properties were systematically tested. Under 13.5 nm EUV irradiation with a light power of 23.46 nW, the photodetector demonstrated a responsivity of 55.31 mA/W and an external quantum efficiency (EQE) of 508% at room temperature with a 0 V bias. Additionally, the photodetector exhibited fast response speed with rise time of 185.8 ns and decay times of 1.3 μs. Considering applications in extreme environments, the photodetector’s performance was evaluated within the temperature range of − 193 to 100 °C, confirming that its operational temperature range significantly surpasses that of traditional silicon photodiodes (− 20 to 80 °C). In this work, we systematically analyze the performance advantages of the β-Ga2O3 EUV photodetector, which provides an important reference for the development of radiation-resistant EUV photodetectors.
The original online version of this article was revised: In this article, for references 2, 3, 6–9, 11–13, 15–20 and 22–24 page numbers were missing.
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© The Author(s), under exclusive licence to EDP Sciences, Springer-Verlag GmbH Germany, part of Springer Nature 2025
corrected publication 2025
Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
