Eur. Phys. J. Spec. Top.
https://doi.org/10.1140/epjs/s11734-025-01528-9

Editorial

Ultra-wide-bandgap semiconductors: opportunities and challenges

¹ School of Materials, Shenzhen Campus of Sun Yat-sen University, Sun Yat-Sen University, 518107, Shenzhen, China
² Department of Physics, Zhejiang Sci-Tech University, 310018, Hangzhou, China
³ Songshan Lake Materials Laboratory, 523808, Dongguan, China

^a zhengw37@mail.sysu.edu.cn

Abstract

This editorial focuses on the special issue titled “Ultra-Wide-Bandgap Semiconductors”. It elaborates on the motivation for this special issue, introduces the application potentials and challenges of semiconductors such as gallium oxide, aluminum nitride, diamond, and cubic boron nitride in various fields, summarizes the research content of relevant papers, presents the current research status and development trends in this field, and provides references for researchers in this area.