EPJ Special Topics (EPJ ST)

Open Access

Editorial

Ultra-wide-bandgap semiconductors: opportunities and challenges

Wei Zheng, Daoyou Guo and Ye Yuan

Published online: 06 March 2025

DOI: 10.1140/epjs/s11734-025-01528-9

Review

Growth of gallium oxide bulk crystals: a review

Lin Huang, Huili Tang, Chaoyi Zhang, Peng Sun, Qiancheng Fang, Feng Wu, Ping Luo, Bo Liu and Jun Xu

Published online: 17 February 2025

DOI: 10.1140/epjs/s11734-025-01486-2

Regular Article

Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition

Tiecheng Luo, Xifu Chen, Zhuo Yang, Weiqu Chen, Chenhong Huang, Hongtai Luo, Yanli Pei, Xing Lu, Gang Wang and Zimin Chen

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01485-3

Regular Article

Demonstration of vertical Ga₂O₃ Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

Hongyu Liu, Shida Han, Xiaoli Lu, Yuangang Wang, Shaobo Dun, Tingting Han, Yuanjie Lv and Zhihong Feng

Published online: 14 March 2025

DOI: 10.1140/epjs/s11734-024-01432-8

Regular Article

A novel Ga₂O₃ cascode JFET with normally off operation and low switching loss

Hao Yu Song, Bo Yi, Ze Lin Zhao, Wan Li Zhang and Ling-Xuan Qian

Published online: 16 December 2024

DOI: 10.1140/epjs/s11734-024-01429-3

Regular Article

β-Ga₂O₃ extreme ultraviolet photodetectors

Naiji Zhang, Zhao Wang, Zhuogeng Lin, Siqi Zhu, Wei Cai, Lixin Zhang, Xin Zhang, Muqi Rong, Xiaoshi Zhang, Duanyang Chen et al. (2 more)

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01487-1

Regular Article

Enabling DUV polarization detection with isotropic amorphous gallium oxide

Yaqian Zhang, Yonghui Zhang, Huili Liang, Rui Zhu, Xina Wang, Xiaoniu Peng and Zengxia Mei

Published online: 14 November 2024

DOI: 10.1140/epjs/s11734-024-01390-1

Regular Article

Impact of contact properties on the performance of β-Ga₂O₃ solar-blind photodetector

Yu-Song Dong, Ming-Xuan Liang and Ling-Xuan Qian

Published online: 07 January 2025

DOI: 10.1140/epjs/s11734-024-01459-x

Regular Article

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector

Xi Guo, Mengmeng Chang, Jinbin Wang, Ruxue Bai, Xiangli Zhong, Fabi Zhang, Fengmin Wu and Daoyou Guo

Published online: 05 November 2024

DOI: 10.1140/epjs/s11734-024-01387-w

Regular Article

Improved performance of Ga₂O₃ solar-blind ultraviolet photodetectors with integrated n⁺n/Schottky-junctions

Weisen Li, Jiarong Liang, Qijun Sun, Xingui Tang and Dan Zhang

Published online: 14 November 2024

DOI: 10.1140/epjs/s11734-024-01393-y

Open Access

Regular Article

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Zuoyan Qin, Wenliang Li, Guangze He, Jun Tan, Liying Yin, Jianhua Ji, Baikui Li, Zhenhua Sun and Honglei Wu

Published online: 06 November 2024

DOI: 10.1140/epjs/s11734-024-01388-9

Regular Article

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate

Jiahui Li, Ye Yuan, Tianren Cai, Hengyi Yin, Jiale Zhao, Jiakang Cao, Wenting Wan, Shuai Liu and Yu Zhao

Published online: 12 December 2024

DOI: 10.1140/epjs/s11734-024-01433-7

Regular Article

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates

Nianfei Wen, Ye Yuan, Tianren Cai, Tongxin Lu, Tai Li, Jiahui Li, Jiale Zhao, Hengyi Yin, Jiakang Cao, Shuai Liu et al. (3 more)

Published online: 09 January 2025

DOI: 10.1140/epjs/s11734-024-01460-4

Regular Article

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes

Tingting Lin, Liwei Liu, Xinguo Liu, Chengyu Liu, Changjian Zhou and Wenliang Wang

Published online: 10 February 2025

DOI: 10.1140/epjs/s11734-025-01488-0

Regular Article

Design of high-frequency surface acoustic wave resonators based on Al_0.8Sc_0.2N/AlN/Sapphire multilayer structure

Ji Li, Wei Guo, Fanping Meng, Sitong Chen, Fang Ye, Weiping Xie, Li Chen, Jinyan Wang and Jichun Ye

Published online: 09 December 2024

DOI: 10.1140/epjs/s11734-024-01430-w

Review

Progress in first-principles studies on doped semiconductor diamond

Zhen Wang, Peng Jin, Pengfei Qu, Fanqiu Cao, Xu Han and Zhanguo Wang

Published online: 13 January 2025

DOI: 10.1140/epjs/s11734-024-01458-y

Regular Article

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection

Zhuogeng Lin, Lixin Zhang, Siqi Zhu, Zhao Wang, Naiji Zhang, Xing Wei, Xiangfa Zhang and Wei Zheng

Published online: 19 November 2024

DOI: 10.1140/epjs/s11734-024-01389-8

EPJ

The European Physical Journal Special Topics

Ultra-Wide-Bandgap Semiconductors

Ultra-wide-bandgap semiconductors: opportunities and challenges

Growth of gallium oxide bulk crystals: a review

Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition

Demonstration of vertical Ga₂O₃ Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

A novel Ga₂O₃ cascode JFET with normally off operation and low switching loss

β-Ga₂O₃ extreme ultraviolet photodetectors

Enabling DUV polarization detection with isotropic amorphous gallium oxide

Impact of contact properties on the performance of β-Ga₂O₃ solar-blind photodetector

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga₂O₃ solar-blind photodetector

Improved performance of Ga₂O₃ solar-blind ultraviolet photodetectors with integrated n⁺n/Schottky-junctions

Chromatic aberration in homogeneous diameter expansion growth of AlN crystals by the PVT method

Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate

Investigating effect of sapphire miscut angle on UVC-LED performance with single-crystalline AlN/sapphire templates

AlGaN-based self-powered solar-blind UV photodetectors with Ni/Au electrodes

Design of high-frequency surface acoustic wave resonators based on Al_0.8Sc_0.2N/AlN/Sapphire multilayer structure

Progress in first-principles studies on doped semiconductor diamond

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection

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